Bonding materials of dissimilar coefficients of thermal expansion

ABSTRACT

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

TECHNICAL FIELD

The disclosure herein relates to bonding materials of dissimilarcoefficients of thermal expansion, such as GaAs and silicon, which maybe used in x-ray detectors.

BACKGROUND

X-ray detectors may be devices used to measure the flux, spatialdistribution, spectrum or other properties of X-rays.

X-ray detectors may be used for many applications. One importantapplication is imaging. X-ray imaging is a radiography technique and canbe used to reveal the internal structure of a non-uniformly composed andopaque object such as the human body.

Early X-ray detectors for imaging include photographic plates andphotographic films. A photographic plate may be a glass plate with acoating of light-sensitive emulsion. Although photographic plates werereplaced by photographic films, they may still be used in specialsituations due to the superior quality they offer and their extremestability. A photographic film may be a plastic film (e.g., a strip orsheet) with a coating of light-sensitive emulsion.

In the 1980s, photostimulable phosphor plates (PSP plates) becameavailable. A PSP plate may contain a phosphor material with colorcenters in its lattice. When the PSP plate is exposed to X-ray,electrons excited by X-ray are trapped in the color centers until theyare stimulated by a laser beam scanning over the plate surface. As theplate is scanned by laser, trapped excited electrons give off light,which is collected by a photomultiplier tube. The collected light isconverted into a digital image. In contrast to photographic plates andphotographic films, PSP plates can be reused.

Another kind of X-ray detectors are X-ray image intensifiers. Componentsof an X-ray image intensifier are usually sealed in a vacuum. Incontrast to photographic plates, photographic films, and PSP plates,X-ray image intensifiers may produce real-time images, i.e., notrequiring post-exposure processing to produce images. X-ray first hitsan input phosphor (e.g., cesium iodide) and is converted to visiblelight. The visible light then hits a photocathode (e.g., a thin metallayer containing cesium and antimony compounds) and causes emission ofelectrons. The number of emitted electrons is proportional to theintensity of the incident X-ray. The emitted electrons are projected,through electron optics, onto an output phosphor and cause the outputphosphor to produce a visible-light image.

Scintillators operate somewhat similarly to X-ray image intensifiers inthat scintillators (e.g., sodium iodide) absorb X-ray and emit visiblelight, which can then be detected by a suitable image sensor for visiblelight. In scintillators, the visible light spreads and scatters in alldirections and thus reduces spatial resolution. Reducing thescintillator thickness helps to improve the spatial resolution but alsoreduces absorption of X-ray. A scintillator thus has to strike acompromise between absorption efficiency and resolution.

Semiconductor X-ray detectors largely overcome this problem by a directconversion of X-ray into electric signals. A semiconductor X-raydetector may include a semiconductor layer that absorbs X-ray inwavelengths of interest. When an X-ray photon is absorbed in thesemiconductor layer, multiple charge carriers (e.g., electrons andholes) are generated and swept under an electric field towardselectrical contacts on the semiconductor layer. Cumbersome heatmanagement required in currently available semiconductor X-ray detectors(e.g., Medipix) can make a detector with a large area and a large numberof pixels difficult or impossible to produce.

SUMMARY

Disclosed herein is an X-ray detector comprises: an X-ray absorptionlayer configured to absorb X-ray photons; an electronics layercomprising an electronics system configured to process or interpretsignals generated by the X-ray photons incident on the X-ray absorptionlayer; and a temperature driver in the X-ray absorption layer or in theelectronics layer.

According to an embodiment, the X-ray detector further comprises atemperature sensor in the X-ray absorption layer or the electronicslayer.

According to an embodiment, the temperature driver comprises a Peltierdevice.

According to an embodiment, the temperature driver comprises a resistiveheater.

According to an embodiment, the temperature driver comprisesindividually addressable units.

According to an embodiment, the X-ray absorption layer or theelectronics layer comprises a plurality of chips.

According to an embodiment, the electronics system comprises: a firstvoltage comparator configured to compare a voltage of the electrode to afirst threshold; a second voltage comparator configured to compare thevoltage to a second threshold; a counter configured to register a numberof X-ray photons reaching the X-ray absorption layer; a controller;wherein the controller is configured to start a time delay from a timeat which the first voltage comparator determines that an absolute valueof the voltage equals or exceeds an absolute value of the firstthreshold; wherein the controller is configured to activate the secondvoltage comparator during the time delay; wherein the controller isconfigured to cause the number registered by the counter to increase byone, if the second voltage comparator determines that an absolute valueof the voltage equals or exceeds an absolute value of the secondthreshold.

According to an embodiment, the electronics system further comprises acapacitor module electrically connected to the electrode of the firstX-ray absorption layer, wherein the capacitor module is configured tocollect charge carriers from the electrode of the first X-ray absorptionlayer.

According to an embodiment, the controller is configured to activate thesecond voltage comparator at a beginning or expiration of the timedelay.

According to an embodiment, the electronics system further comprises avoltmeter, wherein the controller is configured to cause the voltmeterto measure the voltage upon expiration of the time delay.

According to an embodiment, the controller is configured to determine anX-ray photon energy based on a value of the voltage measured uponexpiration of the time delay.

According to an embodiment, the controller is configured to connect theelectrode of the first X-ray absorption layer to an electrical ground.

According to an embodiment, a rate of change of the voltage issubstantially zero at expiration of the time delay.

According to an embodiment, a rate of change of the voltage issubstantially non-zero at expiration of the time delay.

According to an embodiment, the X-ray absorption layer comprises adiode.

According to an embodiment, the X-ray absorption layer comprises GaAs,CdTe, CdZnTe, or a combination thereof and the electronics layercomprises silicon.

Disclosed herein is a method comprising: setting a layer of a firstmaterial to a first temperature; setting a layer of a second material toa second temperature, wherein the first material and the second materialhave different coefficients of thermal expansion; bonding the layer ofthe first material and the layer of the second material while the layerof the first material is at the first temperature and the layer of thesecond material is at the second temperature; changing temperatures ofthe layer of the first material and the layer of the second materialtoward a third temperature while maintaining relative thermal expansionsof the layers essentially equal at all times before the layers reach thethird temperature; wherein changing the temperatures of the layer of thefirst material and the layer of the second material toward the thirdtemperature comprises using a temperature driver in the layer of thefirst material or the layer of the second material.

According to an embodiment, the layer of the first material and thelayer of the second material are bonded by direct bonding or flip chipbonding.

According to an embodiment, the third temperature is below 40° C.

According to an embodiment, the layer of the first material is an X-rayabsorption layer configured to absorb X-ray photons; wherein the layerof the second material is an electronics layer comprising an electronicssystem configured to process or interpret signals generated by the X-rayphotons incident on the X-ray absorption layer.

Disclosed herein is a system for bonding a first layer and a secondlayer, comprising: a controller comprising a processor and a memory, thememory configured to store a program therein, the processor configuredto control powers to a temperature driver in the second layer byexecuting the program; wherein the program, when executed, causes theprocessor to set powers to the temperature driver such that relativethermal expansions of the first layer and the second layer areessentially the same at all time during a process of bonding the firstlayer and the second layer.

According to an embodiment, the first layer is an X-ray absorption layerconfigured to absorb X-ray photons; wherein the second layer is anelectronics layer comprising an electronics system configured to processor interpret signals generated by the X-ray photons incident on theX-ray absorption layer.

According to an embodiment, the second layer is mounted to a support andthe controller controls the powers to the temperature driver through anelectrical contact on the support.

According to an embodiment, the second layer comprises a temperaturesensor.

According to an embodiment, the controller reads temperature of thesecond layer from the temperature sensor and controls the powers to thetemperature driver in the second layer based on the temperature readfrom the temperature sensor.

Disclosed herein is a method comprising: positioning a chip to alocation of a wafer, the wafer comprising a temperature driver therein,the temperature driver comprising a plurality of individuallyaddressable units; bonding the chip to the wafer by changing atemperature of the location using the individually addressable units,without changing a temperature of another location of the wafer usingthe individually addressable units.

According to an embodiment, the chip is part of an X-ray absorptionlayer of an X-ray detector and the wafer is part of an electronics layerof the X-ray detector; wherein the X-ray absorption layer is configuredto absorb X-ray photons and the electronics layer comprises anelectronics system configured to process or interpret signals generatedby the X-ray photons incident on the X-ray absorption layer.

According to an embodiment, the chip comprises a III-V semiconductor andthe wafer comprises silicon.

According to an embodiment, the temperature of the location is changedsuch that solder bumps at the location are melted.

BRIEF DESCRIPTION OF FIGURES

FIG. 1A schematically shows a cross-sectional view of a detector,according to an embodiment of the present teaching.

FIG. 1B schematically shows a detailed cross-sectional view of thedetector, according to an embodiment of the present teaching.

FIG. 1C schematically shows an alternative detailed cross-sectional viewof the detector, according to an embodiment of the present teaching.

FIG. 1D shows an exemplary top view of a portion of the detector,according to an embodiment of the present teaching.

FIG. 2A schematically shows the electronics layer.

FIG. 2B schematically shows the electronics layer.

FIG. 2C schematically shows the electronics layer.

FIG. 3A schematically shows thermal expansion of the X-ray absorptionlayer and the electronics layer during the bonding process if the X-rayabsorption layer and the substrate of the electronics layer havesubstantially different coefficients of thermal expansion and the X-rayabsorption layer and the electronics layer are always at the sametemperature at any given moment during the bonding process.

FIG. 3B shows plots of the relative thermal expansion as a function oftemperature of the X-ray absorption layer and the substrate of theelectronics layer, respectively, before the X-ray absorption layer andthe electronics layer are bonded.

FIG. 4A schematically shows thermal expansion of the X-ray absorptionlayer and the electronics layer during the bonding process if the X-rayabsorption layer and the substrate of the electronics layer havesubstantially different coefficients of thermal expansion and thetemperatures of the X-ray absorption layer and the electronics layer areseparately controlled during the bonding process.

FIG. 4B shows plots of the relative thermal expansion as a function oftemperature of the X-ray absorption layer and the substrate of theelectronics layer, respectively, before the X-ray absorption layer andthe electronics layer are bonded.

FIG. 5 schematically shows an upper chuck and a lower chuck of a waferbonding system.

FIG. 6 schematically shows a flow of a method of bonding the X-rayabsorption layer and the electronics layer of the X-ray detector.

FIG. 7A schematically shows that the X-ray absorption layer or theelectronics layer may include a temperature driver therein.

FIG. 7B schematically shows that the temperature driver in the X-rayabsorption layer or the electronics layer may include multipleindividually addressable units.

FIG. 7C schematically shows a flow for bonding a plurality of chips to awafer having a temperature driver that includes multiple individuallyaddressable units.

FIG. 8A schematically shows, as an example, that the electronics layerincludes bonding pads electrically connected to the temperature driverin the electronics layer.

FIG. 8B shows that the X-ray absorption layer in FIG. 8A includesmultiple chips.

FIG. 9 schematically shows a wafer bonding system configured to powerand control the temperature drivers in the X-ray absorption layer or inthe in the electronics layer.

FIG. 10A and FIG. 1013 each show a component diagram of an electronicssystem of the detector in FIG. 1A, FIG. 1B or FIG. 1C, according to anembodiment.

FIG. 11 schematically shows a temporal change of the electric currentflowing through an electrode (upper curve) of a diode or an electricalcontact of a resistor of an X-ray absorption layer exposed to X-ray, theelectric current caused by charge carriers generated by an X-ray photonincident on the X-ray absorption layer, and a corresponding temporalchange of the voltage of the electrode (lower curve), according to anembodiment.

FIG. 12 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by noise (e.g., darkcurrent), and a corresponding temporal change of the voltage of theelectrode (lower curve), in the electronics system operating in the wayshown in FIG. 8, according to an embodiment.

FIG. 13 schematically shows a temporal change of the electric currentflowing through an electrode (upper curve) of the X-ray absorption layerexposed to X-ray, the electric current caused by charge carriersgenerated by an X-ray photon incident on the X-ray absorption layer, anda corresponding temporal change of the voltage of the electrode (lowercurve), when the electronics system operates to detect incident X-rayphotons at a higher rate, according to an embodiment.

FIG. 14 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by noise (e.g., darkcurrent), and a corresponding temporal change of the voltage of theelectrode (lower curve), in the electronics system operating in the wayshown in FIG. 10A or FIG. 10B, according to an embodiment.

FIG. 15 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by charge carriersgenerated by a series of X-ray photons incident on the X-ray absorptionlayer, and a corresponding temporal change of the voltage of theelectrode, in the electronics system operating in the way shown in FIG.10A or FIG. 10B with RST expires before t_(e), according to anembodiment.

DETAILED DESCRIPTION

FIG. 1A schematically shows a semiconductor X-ray detector 100,according to an embodiment. The semiconductor X-ray detector 100 mayinclude an X-ray absorption layer 110 and an electronics layer 120(e.g., an ASIC) for processing or analyzing electrical signals incidentX-ray generates in the X-ray absorption layer 110. In an embodiment, thesemiconductor X-ray detector 100 does not comprise a scintillator. TheX-ray absorption layer 110 may include a semiconductor material such as,silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof. Thesemiconductor may have a high mass attenuation coefficient for the X-rayenergy of interest.

As shown in a detailed cross-sectional view of the detector 100 in FIG.1B, according to an embodiment, the X-ray absorption layer 110 mayinclude one or more diodes (e.g., p-i-n or p-n) formed by a first dopedregion 111, one or more discrete regions 114 of a second doped region113. The second doped region 113 may be separated from the first dopedregion 111 by an optional the intrinsic region 112. The discreteportions 114 are separated from one another by the first doped region111 or the intrinsic region 112. The first doped region 111 and thesecond doped region 113 have opposite types of doping (e.g., region 111is p-type and region 113 is n-type, or region 111 is n-type and region113 is p-type). In the example in FIG. 1B, each of the discrete regions114 of the second doped region 113 forms a diode with the first dopedregion 111 and the optional intrinsic region 112. Namely, in the examplein FIG. 1B, the X-ray absorption layer 110 has a plurality of diodeshaving the first doped region 111 as a shared electrode. The first dopedregion 111 may also have discrete portions.

When an X-ray photon hits the X-ray absorption layer 110 includingdiodes, the X-ray photon may be absorbed and generate one or more chargecarriers by a number of mechanisms. The charge carriers may drift to theelectrodes of one of the diodes under an electric field. The field maybe an external electric field. The electrical contact 119B may includediscrete portions each of which is in electrical contact with thediscrete regions 114.

As shown in an alternative detailed cross-sectional view of the detector100 in FIG. 1C, according to an embodiment, the X-ray absorption layer110 may include a resistor of a semiconductor material such as, silicon,germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does notinclude a diode.

When an X-ray photon hits the X-ray absorption layer 110 including aresistor but not diodes, it may be absorbed and generate one or morecharge carriers by a number of mechanisms. The charge carriers may driftto the electrical contacts 119A and 119B under an electric field. Theelectrical contact 119E3 includes discrete portions.

The electronics layer 120 may include an electronics system 121configured to process or interpret signals generated by X-ray photonsincident on the X-ray absorption layer 110. The electronics system 121may include an analog circuitry such as a filter network, amplifiers,integrators, and comparators, or a digital circuitry such as amicroprocessors, and memory. The electronics system 121 may includecomponents shared by the pixels or components dedicated to a singlepixel. For example, the electronics system 121 may include an amplifierdedicated to each pixel and a microprocessor shared among all thepixels. The electronics system 121 may be electrically connected to thepixels by vias 131. Space among the vias 131 may be filled with a fillermaterial 130, which may increase the mechanical stability of theconnection of the electronics layer 120 to the X-ray absorption layer110. Other bonding techniques are possible to connect the electronicssystem 121 to the pixels without using vias.

FIG. 1D shows an exemplary top view of a portion of the semiconductorX-ray detector 100 with a 4-by-4 array of discrete regions 114/119B.Charge carriers generated by an X-ray photon incident around thefootprint of one of these discrete regions 114/119E3 are notsubstantially shared with another of these discrete regions 114/119B.The area 150 around a discrete region 114/119E3 in which substantiallyall (more than 95%, more than 98% or more than 99% of) charge carriersgenerated by an X-ray photon incident therein flow to the discreteregion 114/119E3 is called a pixel associated with that discrete region114/119B. Namely, less than 5%, less than 2% or less than 1% of thesecharge carriers flow beyond the pixel, when the X-ray photon hits insidethe pixel. By measuring the rate of change of the voltage of each of thediscrete regions 114/119B, the number of X-ray photons absorbed (whichrelates to the incident X-ray intensity) and/or the energies thereof inthe pixels associated with the discrete regions 114/119B may bedetermined. Thus, the spatial distribution (e.g., an image) of incidentX-ray intensity may be determined by individually measuring the rate ofchange of the voltage of each one of an array of discrete regions114/119B. The pixels may be organized in any suitable array, such as, asquare array, a triangular array and a honeycomb array. The pixels mayhave any suitable shape, such as, circular, triangular, square,rectangular, and hexangular. The pixels may be individually addressable.

FIG. 2A schematically shows the electronics layer 120 according to anembodiment. The electronics layer 120 comprises a substrate 122 having afirst surface 124 and a second surface 128. A “surface” as used hereinis not necessarily exposed, but can be buried wholly or partially. Theelectronics layer 120 comprises one or more electric contacts 125 on thefirst surface 124. The one or more electric contacts 125 may beconfigured to be electrically connected to one or more electricalcontacts 119B of the X-ray absorption layer 110. The electronics system121 may be in or on the substrate 122. The electronics layer 120comprises one or more vias 126 extending from the first surface 124 tothe second surface 128. The electronics layer 120 may comprise aredistribution layer (RDL) 123 on the second surface 128. The RDL 123may comprise one or more transmission lines 127. The electronics system121 is electrically connected to the electric contacts 125 and thetransmission lines 127 through the vias 126.

The substrate 122 may be a thinned substrate. For example, the substratemay have at thickness of 750 microns or less, 200 microns or less, 100microns or less, 50 microns or less, 20 microns or less, or 5 microns orless. The substrate 122 may be a silicon substrate or a substrate orother suitable semiconductor or insulator. The substrate 122 may beproduced by grinding a thicker substrate to a desired thickness.

The one or more electric contacts 125 may be a layer of metal or dopedsemiconductor. For example, the electric contacts 125 may be gold,copper, platinum, palladium, doped silicon, etc.

The vias 126 pass through the substrate 122 and electrically connectelectrical components (e.g., the electrical contacts 125) on the firstsurface 124 to electrical components (e.g., the RDL) on the secondsurface 128. The vias 126 are sometimes referred to as “through-siliconvias” although they may be fabricated in substrates of materials otherthan silicon.

The RDL 123 may comprise one or more transmission lines 127. Thetransmission lines 127 electrically connect electrical components (e.g.,the vias 126) in the substrate 122 to bonding pads at other locations onthe substrate 122. The transmission lines 127 may be electricallyisolated from the substrate 122 except at certain vias 126 and certainbonding pads. The transmission lines 127 may be a material (e.g., Al)with small mass attenuation coefficient for the X-ray energy ofinterest. The RDL 123 may redistribute electrical connections to moreconvenient locations. The RDL 123 is especially useful when the detector100 has a large number of pixels. If the detector 100 does not have alarge number of pixels, the RDL 123 may be omitted and signals from thepixels may be routed on the first surface 124.

FIG. 2A further schematically shows bonding between the X-ray absorptionlayer 110 and the electronics layer 120 at the electrical contact 119Band the electrical contacts 125. The bonding may be by a suitabletechnique such as direct bonding or flip chip bonding.

Direct bonding is a wafer bonding process without any additionalintermediate layers (e.g., solder bumps). The bonding process is basedon chemical bonds between two surfaces. Direct bonding may be atelevated temperature but not necessarily so.

Flip chip bonding uses solder bumps 199 deposited onto contact pads(e.g., the electrical contact 119B of the X-ray absorption layer 110 orthe electrical contacts 125). Either the X-ray absorption layer 110 orthe electronics layer 120 is flipped over and the electrical contacts119B of the X-ray absorption layer 110 are aligned to the electricalcontacts 125. The solder bumps 199 may be melted to solder theelectrical contact 119B and the electrical contacts 125 together. Anyvoid space among the solder bumps 199 may be filled with an insulatingmaterial.

FIG. 2B schematically shows the electronics layer 120 according to anembodiment. The electronics layer 120 shown in FIG. 2B is different fromthe electronics layer 120 shown in FIG. 2A in the following ways. Theelectronics system 121 is buried in the substrate 122. The electronicslayer 120 comprises one or more vias 126A extending from the firstsurface 124 to the second surface 128. The vias 126A electricallyconnect the electrical contacts 125 to the transmission lines 127 in theRDL 123 on the second surface 128. The electronics layer 120 furthercomprises one or more vias 126B extending from the second surface 128 tothe electronics system 121. The vias 126B electrically connect thetransmission lines 127 to the electronics system 121. The X-rayabsorption layer 110 and the electronics layer 120 may also be bondedtogether (e.g., at the electrical contact 119B and the electricalcontacts 125) by a suitable technique such as direct bonding or flipchip bonding.

FIG. 2C schematically shows the electronics layer 120 according to anembodiment. The electronics layer 120 shown in FIG. 2C is different fromthe electronics layer 120 shown in FIG. 2A in the following ways. Theelectronics system 121 is buried in the substrate 122. The electronicslayer 120 does not comprise one or more electric contacts 125 on thefirst surface 124. Instead, the substrate 122 including the buriedelectronics system 121 is bonded to the X-ray absorption layer 110 bydirect bonding. Holes are formed in the substrate 123 and filled withmetal to form the vias 126A that electrically route the electricalcontact 119B to the second surface 128 and to form the vias 126B thatelectrically route the electronics system 121 to the second surface 128.The RDL 123 is then formed on the second surface 128 such that thetransmission lines 127 electrically connect the vias 126A and 126B tocomplete the electrical connection from the electrical contact 119B tothe electronics system 121.

The X-ray absorption layer 110 may include multiple discrete chips. Eachof the chips may be bonded to the electronics layer 120 individually orcollectively. The X-ray absorption layer 110 including multiple discretechips may help to accommodate the difference between the coefficients ofthermal expansion of the materials of the X-ray absorption layer 110 andthe electronics layer 120. The coefficients of thermal expansion may becoefficients of linear thermal expansion or volumetric thermalexpansion.

The X-ray absorption layer 110 may be a different material from thesubstrate 122 of the electronics layer 120. For example, the X-rayabsorption layer 110 may be GaAs and the substrate 122 may be silicon.Bonding of the X-ray absorption layer 110 and the electronics layer 120usually occurs at an elevated temperature and the X-ray absorption layer110 and the electronics layer 120 are cooled to the room temperatureafter bonding. The X-ray absorption layer 110 and the electronics layer120 are usually at the same temperature at any given moment during thebonding process. The X-ray absorption layer 110 and the electronicslayer 120 are usually heated and cooled together. When the X-rayabsorption layer 110 and the substrate 122 of the electronics layer 120have substantially different coefficients of thermal expansion, coolingthe X-ray absorption layer 110 and the electronics layer 120 from thesame elevated temperature to the room temperature causes significantstress at the interface between the X-ray absorption layer 110 and theelectronics layer 120. The stress may cause failure in the detector 100.

FIG. 3A schematically shows thermal expansion of the X-ray absorptionlayer 110 and the electronics layer 120 during the bonding process ifthe X-ray absorption layer 110 and the substrate 122 of the electronicslayer 120 have substantially different coefficients of thermal expansionand the X-ray absorption layer 110 and the electronics layer 120 arealways at the same temperature at any given moment during the bondingprocess. The initial temperature of the X-ray absorption layer 110 andthe electronics layer 120 is T1. The X-ray absorption layer 110 and theelectronics layer 120 are then heated to T2. As FIG. 3A schematicallyshows, the X-ray absorption layer 110 expands more than the substrate122 of the electronics layer 120 does because the X-ray absorption layer110 has a higher coefficient of thermal expansion than the substrate122. The X-ray absorption layer 110 and the electronics layer 120 arefurther heated to T3. At T3, the difference of the expansion of theX-ray absorption layer 110 and the expansion of the electronics layer120 is even more pronounced than at T2. The X-ray absorption layer 110and the electronics layer 120 are bonded at T3, while they are in theirrespective but different expanded states. The bonded X-ray absorptionlayer 110 and electronics layer 120 are then cooled from T3 to T2.Because the X-ray absorption layer 110 and the electronics layer 120 arenow bonded, neither can contract to their respective sizes at T2 beforebonding. A compressive stress and a tensile stress respectively developin the X-ray absorption layer 110 and the substrate 122. As the bondedX-ray absorption layer 110 and electronics layer 120 are further cooledfrom T2 to T1, the compressive stress and the tensile stressrespectively in the X-ray absorption layer 110 and the substrate 122increase. The stress may not be uniform across the entire interfacebetween the X-ray absorption layer 110 and the electronics layer 120.

As shown in FIG. 3B, the lines 3010 and 3020 are the plots of therelative thermal expansion as a function of temperature of the X-rayabsorption layer 110 and the substrate 122 of the electronics layer 120,respectively, before the X-ray absorption layer 110 and the electronicslayer 120 are bonded. The slopes of the lines 3010 and 3020 are thecoefficients of thermal expansion for the X-ray absorption layer 110 andthe substrate 122 of the electronics layer 120, respectively. The line3010 has a higher slope than the line 3020, which means that the X-rayabsorption layer 110 has a greater coefficient of thermal expansion thanthe substrate 122. At T2 or T3, the relative thermal expansion of theX-ray absorption layer 110 is greater than the relative thermalexpansion of the substrate 122.

FIG. 4A schematically shows thermal expansion of the X-ray absorptionlayer 110 and the electronics layer 120 during the bonding process ifthe X-ray absorption layer 110 and the substrate 122 of the electronicslayer 120 have substantially different coefficients of thermal expansionand the temperatures of the X-ray absorption layer 110 and theelectronics layer 120 are separately controlled during the bondingprocess. The initial temperature of the X-ray absorption layer 110 andthe electronics layer 120 is T1. The X-ray absorption layer 110 isheated to T3 and the electronics layer 120 heated to T3′. The X-rayabsorption layer 110 and the electronics layer 120 are not necessarilyheated at the same time. For example, the X-ray absorption layer 110 maybe heated to T3 while the electronics layer 120 is still at T1, and theelectronics layer 120 may be heated to T3′ while the X-ray absorptionlayer 110 is held at T3. The X-ray absorption layer 110 at T3 has thesame relative thermal expansion as the electronics layer 120 at T3′. Inan example, T3′=T1+(T3−T1)α₁₁₀/α₁₂₀, where α₁₁₀ is the coefficient oflinear thermal expansion of the X-ray absorption layer 110 and α₁₂₀ isthe coefficient of linear thermal expansion of the substrate 122 of theelectronics layer 120. The coefficient of linear thermal expansion α ofan object is defined as

$\alpha = {\frac{1}{L}\frac{dL}{dT}}$

where L is a linear dimension of the object. The X-ray absorption layer110 and the electronics layer 120 are bonded when the X-ray absorptionlayer 110 is at T3 and the electronics layer 120 is at T3′. The bondedX-ray absorption layer 110 and electronics layer 120 are then cooledfrom respectively from T3 to T1 and from T3′ to T1. During the coolingprocess, the temperatures of the X-ray absorption layer 110 and theelectronics layer 120 are controlled such that their relative thermalexpansions are essentially the same (i.e., <10% difference). As aresult, there is essentially no stress caused by the difference in thecoefficients of thermal expansion at the interface of the X-rayabsorption layer 110 and the substrate 122 of the electronics layer 120.

As shown in FIG. 4B, the lines 4010 and 4020 are the plots of therelative thermal expansion as a function of temperature of the X-rayabsorption layer 110 and the substrate 122 of the electronics layer 120,respectively, before the X-ray absorption layer 110 and the electronicslayer 120 are bonded. The slopes of the lines 4010 and 4020 are thecoefficients of thermal expansion for the X-ray absorption layer 110 andthe substrate 122 of the electronics layer 120, respectively. The line4010 has a higher slope than the line 4020, which means that the X-rayabsorption layer 110 has a greater coefficient of thermal expansion thanthe substrate 122. When the X-ray absorption layer 110 and theelectronics layer 120 are respectively at T3 and T3′, the relativethermal expansion of the X-ray absorption layer 110 is equal to therelative thermal expansion of the substrate 122.

A wafer bonding system usually sandwiches two wafers (or a wafer andmultiple chips) to be bonded between two chucks. FIG. 5 schematicallyshows an upper chuck 5010 and a lower chuck 5020 of a wafer bondingsystem, and the X-ray absorption layer 110 and the electronics layer 120positioned between the upper chuck 5010 and the lower chuck 5020. A gapis shown between the X-ray absorption layer 110 and the electronicslayer 120 to indicate that the X-ray absorption layer 110 and theelectronics layer 120 have not been bonded. The chucks 5010 and 5020 mayrespectively include temperature drivers (e.g., heaters or coolers) 5012and 5022 therein. The temperature drivers are configured to change thetemperatures of the chucks 5010 and 5020, respectively. The waferbonding system may have temperature sensors 5011 and 5021 configured tomeasure the temperatures of the X-ray absorption layer 110 and theelectronics layer 120. The temperature drivers 5012 and 5022 in thechucks 5010 and 5020 may be controlled by a controller 5500 based on thetemperatures of the X-ray absorption layer 110 and the electronics layer120 obtained by the temperature sensors 5011 and 5021. The controller5500 may include a processor and a memory. The memory is configured tohave programs stored therein. The processor is configured to control thepowers of the temperature drivers 5012 and 5022 by executing a programin the memory. For example, a program may cause the processor to set thepowers to the powers of the temperature drivers 5012 and 5022 such thatthe relative thermal expansions of the X-ray absorption layer 110 andthe electronics layer 120 are essentially the same (i.e., <10%difference) at all time during a bonding process.

FIG. 6 schematically shows a flow of a method of bonding a layer of afirst material and a layer of a second material, where the first andsecond materials have dissimilar coefficients of thermal expansion. Forexample, the first layer may be the X-ray absorption layer 110 and thesecond layer may be the electronics layer 120 of the X-ray detector 100.In procedure 6010, the layer of the first material (e.g., the X-rayabsorption layer 110) is set to a first temperature and the layer of thesecond material (e.g., the electronics layer 120) is set to a secondtemperature. In procedure 6020, the layer of the first material and thelayer of the second material are bonded while the layer of the firstmaterial is at the first temperature and the layer of the secondmaterial is at the second temperature. The layer of the first materialand the layer of the second material may be bonded by a suitabletechnique such as direct bonding or flip chip bonding. Solder bumps orballs may be but not necessarily used. In procedure 6030, thetemperatures of the layer of the first material and the layer of thesecond material are changed toward a third temperature while maintainingthe relative thermal expansions of these layers essentially equal (i.e.,<10% difference) at all time before the temperatures of the layer of thefirst material and the layer of the second material reach the thirdtemperature. Changing the temperatures of the layer of the firstmaterial and the layer of the second material includes using atemperature driver in the layer of the first material or in the layer ofthe second material. The third temperature may be the room temperature.The third temperature may be a temperature below 40° C. The relativethermal expansions in this flow are relative to the dimensions of thelayer of the first material and the layer of the second material at thethird temperature, respectively.

FIG. 7A schematically shows that the X-ray absorption layer 110 or theelectronics layer 120 may include a temperature driver 7000 therein. Thetemperature drivers 7000 are configured to change the temperatures ofthe X-ray absorption layer 110 or the electronics layer 120,respectively. The temperature driver 7000 may be embedded in or on thesurface of the X-ray absorption layer 110 or the electronics layer 120.The temperature driver 7000 may be a resistive heater or a Peltierdevice (which may heat or cool depending on the electric currentdirection through the Peltier device). The temperature driver 7000 maybe arranged around, underneath or in between the electrical contacts119B or the electrical contacts 125.

FIG. 7B schematically shows that the temperature driver 7000 may includemultiple individually addressable units. These individually addressableunits may be controlled independently from one another and may be usedto locally heat or cool one or more areas of the X-ray absorption layer110 or the electronics layer 120. The individually addressable units areuseful to make the temperatures across the X-ray absorption layer 110 orthe electronics layer 120 more uniform. The individually addressableunits are especially useful when the X-ray absorption layer 110 or theelectronics layer 120 include multiple discrete chips. In an example,the chips of one of the X-ray absorption layer 110 and the electronicslayer 120 may not be positioned onto the other one of the X-rayabsorption layer 110 and the electronics layer 120 at the same time. Ifa chip is positioned onto the other one of the X-ray absorption layer110 and the electronics layer 120 without being bonded thereto beforethe next chip is positioned, the chip may shift and thus ruin thealignment of the chip. The individually addressable units can be used tolocally heat the location to which the chip is positioned and therebybond the chip before the next chip is positioned. When the X-rayabsorption layer 110 includes multiple chips and uses a III-Vsemiconductor (e.g., GaAs) for absorption of X-ray and the substrate 122of the electronics layer 120 is a silicon substrate, the chips may bebonded to the substrate 122 using solder bumps. Forming solder bumps onsilicon is easier than forming solder bumps on III-V semiconductors. Theindividually addressable units may be used to melt the bumps at alocation to which a chip is positioned before the next chip ispositioned thereby bond the chip, while keeping solder bumps elsewherebelow their melting point.

FIG. 7C schematically shows a flow for bonding a plurality of chips to awafer having a temperature driver that includes multiple individuallyaddressable units. In procedure 7010, one of the chips is positioned toa location of the wafer. In procedure 7020, that chip is bonded to thewafer by changing a temperature of the location using the individuallyaddressable units, without changing a temperature of another location ofthe wafer using the individually addressable units. The chip may bebonded before another chip is positioned to the wafer. The chips may bepart of the X-ray absorption layer 110 and the wafer may be part of theelectronics layer 120. The chip may include a III-V semiconductor suchas GaAs. The wafer may include silicon. There may be solder bumpsbetween that chip positioned to the location and the wafer. There may besolder bumps elsewhere on the wafer. The temperature of the location maybe changed using the individually addressable units such that the solderbumps at the location are melted during bonding. The solder at thelocation is then cooled and solidified. The solder at the location mayremain solid while bonding occurs at other locations.

As FIG. 8A schematically shows, as an example, that the electronicslayer 120 includes bonding pads 129 electrically connected to thetemperature driver 7000 in the electronics layer 120. The electronicslayer 120 is mounted to a support 500. The bonding pads 129 and bondingpads 510 of the support 500 may be electrically connected by wirebonding. A controller 8800 in or outside the support 500 regulates thepower supplied to the temperature driver 7000. FIG. 8B shows that theX-ray absorption layer 110 includes multiple chips. The chips may besupported on a carrier 117. The chips are mounted on to the electronicslayer 120 such that the electrical contacts 119B and the electricalcontacts 125 are aligned. The flow of FIG. 6 is applied to the X-rayabsorption layer 110 and the electronics layer 120 where the temperatureof the electronics layer 120 is controlled using the temperature driver7000 in the electronics layer 120. If the temperature driver 7000 in theelectronics layer 120 includes multiple individually addressable units,bonding of the electronics layer 120 and the different chips of theX-ray absorption layer 110 may occur at different time. For example,some of the chips may be mounted to and bonded to the electronics layer120 before others of the chips are mounted to and bonded to theelectronics layer 120. The temperature of the X-ray absorption layer 110may be controlled using an external temperature driver or anytemperature driver 7000 in the X-ray absorption layer 110. For example,the temperature of the X-ray absorption layer 110 may be controlledusing a temperature driver in the carrier 117 or in a chuck. The systemof FIG. 8A and FIG. 8B are also applicable to the situation where theelectronics layer 120 includes multiple chips.

FIG. 9 schematically shows a wafer bonding system configured to powerand control the temperature drivers 7000 in a first layer such as theX-ray absorption layer 110 or in a second layer such as the in theelectronics layer 120. FIG. 9 shows an example where the system powersand controls the temperature drivers 7000 in the second layer such asthe electronics layer 120 but the system can equally power and controlthe temperature drivers 7000 in the first layer such as the X-rayabsorption layer 110. The first layer such as the X-ray absorption layer110 may have multiple chips. The first layer may be thermally connectedto a temperature driver 9010 and the temperature of the first layer maybe measured by a temperature sensor 9020. In this example, the secondlayer such as the electronics layer 120 has the temperature drivers 7000therein. The second layer such as the electronics layer 120 may have atemperature sensor 7010 therein or the system may have a temperature7010 outside the second layer. The chips of the first layer arepositioned on the second layer. A gap is shown between the first layerand the second layer to indicate that they have not been bonded. Thesecond layer may be mounted to the support 500, which has an electricalcontact 598 that is electrically connected to the temperature driver7000 in the electronics layer 120, and an electrical contact 599electrically connected to the temperature sensor 7010 if the temperaturesensor 7010 is in the second layer. The temperature drivers 7000 and9010 may be controlled by a controller 9900 based on the temperatures ofthe first and second layers obtained by the temperature sensors 9020 and7010. The controller 9900 may include a processor and a memory. Thememory is configured to have programs stored therein. The processor isconfigured to control the powers of the temperature drivers 7000 and9010 by executing a program in the memory. For example, a program, whenexecuted, may cause the processor to set the powers to the temperaturedrivers 7000 and 9010 such that the relative thermal expansions of thefirst and second layers are essentially the same (i.e., <10% difference)at all time during a bonding process.

FIG. 10A and FIG. 10B each show a component diagram of the electronicssystem 121, according to an embodiment. The electronics system 121 mayinclude a first voltage comparator 301, a second voltage comparator 302,a counter 320, a switch 305, a voltmeter 306 and a controller 310.

The first voltage comparator 301 is configured to compare the voltage ofan electrode of a diode 300 to a first threshold. The diode may be adiode formed by the first doped region 111, one of the discrete regions114 of the second doped region 113, and the optional intrinsic region112. Alternatively, the first voltage comparator 301 is configured tocompare the voltage of an electrical contact (e.g., a discrete portionof electrical contact 119B) to a first threshold. The first voltagecomparator 301 may be configured to monitor the voltage directly, orcalculate the voltage by integrating an electric current flowing throughthe diode or electrical contact over a period of time. The first voltagecomparator 301 may be controllably activated or deactivated by thecontroller 310. The first voltage comparator 301 may be a continuouscomparator. Namely, the first voltage comparator 301 may be configuredto be activated continuously, and monitor the voltage continuously. Thefirst voltage comparator 301 configured as a continuous comparatorreduces the chance that the system 121 misses signals generated by anincident X-ray photon. The first voltage comparator 301 configured as acontinuous comparator is especially suitable when the incident X-rayintensity is relatively high. The first voltage comparator 301 may be aclocked comparator, which has the benefit of lower power consumption.The first voltage comparator 301 configured as a clocked comparator maycause the system 121 to miss signals generated by some incident X-rayphotons. When the incident X-ray intensity is low, the chance of missingan incident X-ray photon is low because the time interval between twosuccessive photons is relatively long. Therefore, the first voltagecomparator 301 configured as a clocked comparator is especially suitablewhen the incident X-ray intensity is relatively low. The first thresholdmay be 5-10%, 10%-20%, 20-30%, 30-40% or 40-50% of the maximum voltageone incident X-ray photon may generate in the diode or the resistor. Themaximum voltage may depend on the energy of the incident X-ray photon(i.e., the wavelength of the incident X-ray), the material of the X-rayabsorption layer 110, and other factors. For example, the firstthreshold may be 50 mV, 100 mV, 150 mV, or 200 mV.

The second voltage comparator 302 is configured to compare the voltageto a second threshold. The second voltage comparator 302 may beconfigured to monitor the voltage directly, or calculate the voltage byintegrating an electric current flowing through the diode or theelectrical contact over a period of time. The second voltage comparator302 may be a continuous comparator. The second voltage comparator 302may be controllably activate or deactivated by the controller 310. Whenthe second voltage comparator 302 is deactivated, the power consumptionof the second voltage comparator 302 may be less than 1%, less than 5%,less than 10% or less than 20% of the power consumption when the secondvoltage comparator 302 is activated. The absolute value of the secondthreshold is greater than the absolute value of the first threshold. Asused herein, the term “absolute value” or “modulus” |x| of a real numberx is the non-negative value of x without regard to its sign. Namely,

${x} = \{ {\begin{matrix}{x,{{{if}\mspace{14mu} x} \geq 0}} \\{{- x},{{{if}\mspace{14mu} x} \leq 0}}\end{matrix}.} $

The second threshold may be 200%-300% of the first threshold. The secondthreshold may be at least 50% of the maximum voltage one incident X-rayphoton may generate in the diode or resistor. For example, the secondthreshold may be 100 mV, 150 mV, 200 mV, 250 mV or 300 mV. The secondvoltage comparator 302 and the first voltage comparator 310 may be thesame component. Namely, the system 121 may have one voltage comparatorthat can compare a voltage with two different thresholds at differenttimes.

The first voltage comparator 301 or the second voltage comparator 302may include one or more op-amps or any other suitable circuitry. Thefirst voltage comparator 301 or the second voltage comparator 302 mayhave a high speed to allow the system 121 to operate under a high fluxof incident X-ray. However, having a high speed is often at the cost ofpower consumption.

The counter 320 is configured to register a number of X-ray photonsreaching the diode or resistor. The counter 320 may be a softwarecomponent (e.g., a number stored in a computer memory) or a hardwarecomponent (e.g., a 4017 IC and a 7490 IC).

The controller 310 may be a hardware component such as a microcontrollerand a microprocessor. The controller 310 is configured to start a timedelay from a time at which the first voltage comparator 301 determinesthat the absolute value of the voltage equals or exceeds the absolutevalue of the first threshold (e.g., the absolute value of the voltageincreases from below the absolute value of the first threshold to avalue equal to or above the absolute value of the first threshold). Theabsolute value is used here because the voltage may be negative orpositive, depending on whether the voltage of the cathode or the anodeof the diode or which electrical contact is used. The controller 310 maybe configured to keep deactivated the second voltage comparator 302, thecounter 320 and any other circuits the operation of the first voltagecomparator 301 does not require, before the time at which the firstvoltage comparator 301 determines that the absolute value of the voltageequals or exceeds the absolute value of the first threshold. The timedelay may expire before or after the voltage becomes stable, i.e., therate of change of the voltage is substantially zero. The phase “the rateof change of the voltage is substantially zero” means that temporalchange of the voltage is less than 0.1%/ns. The phase “the rate ofchange of the voltage is substantially non-zero” means that temporalchange of the voltage is at least 0.1%/ns.

The controller 310 may be configured to activate the second voltagecomparator during (including the beginning and the expiration) the timedelay. In an embodiment, the controller 310 is configured to activatethe second voltage comparator at the beginning of the time delay. Theterm “activate” means causing the component to enter an operationalstate (e.g., by sending a signal such as a voltage pulse or a logiclevel, by providing power, etc.). The term “deactivate” means causingthe component to enter a non-operational state (e.g., by sending asignal such as a voltage pulse or a logic level, by cut off power,etc.). The operational state may have higher power consumption (e.g., 10times higher, 100 times higher, 1000 times higher) than thenon-operational state. The controller 310 itself may be deactivateduntil the output of the first voltage comparator 301 activates thecontroller 310 when the absolute value of the voltage equals or exceedsthe absolute value of the first threshold.

The controller 310 may be configured to cause the number registered bythe counter 320 to increase by one, if, during the time delay, thesecond voltage comparator 302 determines that the absolute value of thevoltage equals or exceeds the absolute value of the second threshold.

The controller 310 may be configured to cause the voltmeter 306 tomeasure the voltage upon expiration of the time delay. The controller310 may be configured to connect the electrode to an electrical ground,so as to reset the voltage and discharge any charge carriers accumulatedon the electrode. In an embodiment, the electrode is connected to anelectrical ground after the expiration of the time delay. In anembodiment, the electrode is connected to an electrical ground for afinite reset time period. The controller 310 may connect the electrodeto the electrical ground by controlling the switch 305. The switch maybe a transistor such as a field-effect transistor (FET).

In an embodiment, the system 121 has no analog filter network (e.g., aRC network). In an embodiment, the system 121 has no analog circuitry.

The voltmeter 306 may feed the voltage it measures to the controller 310as an analog or digital signal.

The system 121 may include a capacitor module 309 electrically connectedto the electrode of the diode 300 or which electrical contact, whereinthe capacitor module is configured to collect charge carriers from theelectrode. The capacitor module can include a capacitor in the feedbackpath of an amplifier. The amplifier configured as such is called acapacitive transimpedance amplifier (CTIA). CTIA has high dynamic rangeby keeping the amplifier from saturating and improves thesignal-to-noise ratio by limiting the bandwidth in the signal path.Charge carriers from the electrode accumulate on the capacitor over aperiod of time (“integration period”) (e.g., as shown in FIG. 11,between t₀ to t₁, or t₁-t₂). After the integration period has expired,the capacitor voltage is sampled and then reset by a reset switch. Thecapacitor module can include a capacitor directly connected to theelectrode.

FIG. 11 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by charge carriersgenerated by an X-ray photon incident on the diode or the resistor, anda corresponding temporal change of the voltage of the electrode (lowercurve). The voltage may be an integral of the electric current withrespect to time. At time t₀, the X-ray photon hits the diode or theresistor, charge carriers start being generated in the diode or theresistor, electric current starts to flow through the electrode of thediode or the resistor, and the absolute value of the voltage of theelectrode or electrical contact starts to increase. At time t₁, thefirst voltage comparator 301 determines that the absolute value of thevoltage equals or exceeds the absolute value of the first threshold V1,and the controller 310 starts the time delay TD1 and the controller 310may deactivate the first voltage comparator 301 at the beginning of TD1.If the controller 310 is deactivated before t₁, the controller 310 isactivated at t₁. During TD1, the controller 310 activates the secondvoltage comparator 302. The term “during” a time delay as used heremeans the beginning and the expiration (i.e., the end) and any time inbetween. For example, the controller 310 may activate the second voltagecomparator 302 at the expiration of TD1. If during TD1, the secondvoltage comparator 302 determines that the absolute value of the voltageequals or exceeds the absolute value of the second threshold at time t₂,the controller 310 causes the number registered by the counter 320 toincrease by one. At time t_(e), all charge carriers generated by theX-ray photon drift out of the X-ray absorption layer 110. At time t_(s),the time delay TD1 expires. In the example of FIG. 11, time t_(s) isafter time t_(e); namely TD1 expires after all charge carriers generatedby the X-ray photon drift out of the X-ray absorption layer 110. Therate of change of the voltage is thus substantially zero at t_(s). Thecontroller 310 may be configured to deactivate the second voltagecomparator 302 at expiration of TD1 or at t₂, or any time in between.

The controller 310 may be configured to cause the voltmeter 306 tomeasure the voltage upon expiration of the time delay TD1. In anembodiment, the controller 310 causes the voltmeter 306 to measure thevoltage after the rate of change of the voltage becomes substantiallyzero after the expiration of the time delay TD1. The voltage at thismoment is proportional to the amount of charge carriers generated by anX-ray photon, which relates to the energy of the X-ray photon. Thecontroller 310 may be configured to determine the energy of the X-rayphoton based on voltage the voltmeter 306 measures. One way to determinethe energy is by binning the voltage. The counter 320 may have asub-counter for each bin. When the controller 310 determines that theenergy of the X-ray photon falls in a bin, the controller 310 may causethe number registered in the sub-counter for that bin to increase byone. Therefore, the system 121 may be able to detect an X-ray image andmay be able to resolve X-ray photon energies of each X-ray photon.

After TD1 expires, the controller 310 connects the electrode to anelectric ground for a reset period RST to allow charge carriersaccumulated on the electrode to flow to the ground and reset thevoltage. After RST, the system 121 is ready to detect another incidentX-ray photon. Implicitly, the rate of incident X-ray photons the system121 can handle in the example of FIG. 11 is limited by 1/(TD1+RST). Ifthe first voltage comparator 301 has been deactivated, the controller310 can activate it at any time before RST expires. If the controller310 has been deactivated, it may be activated before RST expires.

FIG. 12 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by noise (e.g., darkcurrent, background radiation, scattered X-rays, fluorescent X-rays,shared charges from adjacent pixels), and a corresponding temporalchange of the voltage of the electrode (lower curve), in the system 121operating in the way shown in FIG. 11. At time t₀, the noise begins. Ifthe noise is not large enough to cause the absolute value of the voltageto exceed the absolute value of V1, the controller 310 does not activatethe second voltage comparator 302. If the noise is large enough to causethe absolute value of the voltage to exceed the absolute value of V1 attime t₁ as determined by the first voltage comparator 301, thecontroller 310 starts the time delay TD1 and the controller 310 maydeactivate the first voltage comparator 301 at the beginning of TD1.During TD1 (e.g., at expiration of TD1), the controller 310 activatesthe second voltage comparator 302. The noise is very unlikely largeenough to cause the absolute value of the voltage to exceed the absolutevalue of V2 during TD1. Therefore, the controller 310 does not cause thenumber registered by the counter 320 to increase. At time t_(e), thenoise ends. At time t_(s), the time delay TD1 expires. The controller310 may be configured to deactivate the second voltage comparator 302 atexpiration of TD1. The controller 310 may be configured not to cause thevoltmeter 306 to measure the voltage if the absolute value of thevoltage does not exceed the absolute value of V2 during TD1. After TD1expires, the controller 310 connects the electrode to an electric groundfor a reset period RST to allow charge carriers accumulated on theelectrode as a result of the noise to flow to the ground and reset thevoltage. Therefore, the system 121 may be very effective in noiserejection.

FIG. 13 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by charge carriersgenerated by an X-ray photon incident on the diode or the resistor, anda corresponding temporal change of the voltage of the electrode (lowercurve), when the system 121 operates to detect incident X-ray photons ata rate higher than 1/(TD1+RST). The voltage may be an integral of theelectric current with respect to time. At time t₀, the X-ray photon hitsthe diode or the resistor, charge carriers start being generated in thediode or the resistor, electric current starts to flow through theelectrode of the diode or the electrical contact of resistor, and theabsolute value of the voltage of the electrode or the electrical contactstarts to increase. At time t₁, the first voltage comparator 301determines that the absolute value of the voltage equals or exceeds theabsolute value of the first threshold V1, and the controller 310 startsa time delay TD2 shorter than TD1, and the controller 310 may deactivatethe first voltage comparator 301 at the beginning of TD2. If thecontroller 310 is deactivated before t₁, the controller 310 is activatedat t₁. During TD2 (e.g., at expiration of TD2), the controller 310activates the second voltage comparator 302. If during TD2, the secondvoltage comparator 302 determines that the absolute value of the voltageequals or exceeds the absolute value of the second threshold at time t₂,the controller 310 causes the number registered by the counter 320 toincrease by one. At time t_(e), all charge carriers generated by theX-ray photon drift out of the X-ray absorption layer 110. At time t_(h),the time delay TD2 expires. In the example of FIG. 13, time t_(h) isbefore time t_(e); namely TD2 expires before all charge carriersgenerated by the X-ray photon drift out of the X-ray absorption layer110. The rate of change of the voltage is thus substantially non-zero att_(h). The controller 310 may be configured to deactivate the secondvoltage comparator 302 at expiration of TD2 or at t₂, or any time inbetween.

The controller 310 may be configured to extrapolate the voltage at t_(e)from the voltage as a function of time during TD2 and use theextrapolated voltage to determine the energy of the X-ray photon.

After TD2 expires, the controller 310 connects the electrode to anelectric ground for a reset period RST to allow charge carriersaccumulated on the electrode to flow to the ground and reset thevoltage. In an embodiment, RST expires before t_(e). The rate of changeof the voltage after RST may be substantially non-zero because allcharge carriers generated by the X-ray photon have not drifted out ofthe X-ray absorption layer 110 upon expiration of RST before t_(e). Therate of change of the voltage becomes substantially zero after t_(e) andthe voltage stabilized to a residue voltage VR after t_(e). In anembodiment, RST expires at or after t_(e), and the rate of change of thevoltage after RST may be substantially zero because all charge carriersgenerated by the X-ray photon drift out of the X-ray absorption layer110 at t_(e). After RST, the system 121 is ready to detect anotherincident X-ray photon. If the first voltage comparator 301 has beendeactivated, the controller 310 can activate it at any time before RSTexpires. If the controller 310 has been deactivated, it may be activatedbefore RST expires.

FIG. 14 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by noise (e.g., darkcurrent, background radiation, scattered X-rays, fluorescent X-rays,shared charges from adjacent pixels), and a corresponding temporalchange of the voltage of the electrode (lower curve), in the system 121operating in the way shown in FIG. 13. At time t₀, the noise begins. Ifthe noise is not large enough to cause the absolute value of the voltageto exceed the absolute value of V1, the controller 310 does not activatethe second voltage comparator 302. If the noise is large enough to causethe absolute value of the voltage to exceed the absolute value of V1 attime t₁ as determined by the first voltage comparator 301, thecontroller 310 starts the time delay TD2 and the controller 310 maydeactivate the first voltage comparator 301 at the beginning of TD2.During TD2 (e.g., at expiration of TD2), the controller 310 activatesthe second voltage comparator 302. The noise is very unlikely largeenough to cause the absolute value of the voltage to exceed the absolutevalue of V2 during TD2. Therefore, the controller 310 does not cause thenumber registered by the counter 320 to increase. At time t_(e), thenoise ends. At time t_(h), the time delay TD2 expires. The controller310 may be configured to deactivate the second voltage comparator 302 atexpiration of TD2. After TD2 expires, the controller 310 connects theelectrode to an electric ground for a reset period RST to allow chargecarriers accumulated on the electrode as a result of the noise to flowto the ground and reset the voltage. Therefore, the system 121 may bevery effective in noise rejection.

FIG. 15 schematically shows a temporal change of the electric currentflowing through the electrode (upper curve) caused by charge carriersgenerated by a series of X-ray photons incident on the diode or theresistor, and a corresponding temporal change of the voltage of theelectrode (lower curve), in the system 121 operating in the way shown inFIG. 13 with RST expires before t_(e). The voltage curve caused bycharge carriers generated by each incident X-ray photon is offset by theresidue voltage before that photon. The absolute value of the residuevoltage successively increases with each incident photon. When theabsolute value of the residue voltage exceeds V1 (see the dottedrectangle in FIG. 15), the controller starts the time delay TD2 and thecontroller 310 may deactivate the first voltage comparator 301 at thebeginning of TD2. If no other X-ray photon incidence on the diode or theresistor during TD2, the controller connects the electrode to theelectrical ground during the reset time period RST at the end of TD2,thereby resetting the residue voltage. The residue voltage thus does notcause an increase of the number registered by the counter 320.

While various aspects and embodiments have been disclosed herein, otheraspects and embodiments will be apparent to those skilled in the art.The various aspects and embodiments disclosed herein are for purposes ofillustration and are not intended to be limiting, with the true scopeand spirit being indicated by the following claims.

1. (canceled)
 2. (canceled)
 3. (canceled)
 4. (canceled)
 5. (canceled) 6.(canceled)
 7. (canceled)
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 10. (canceled) 11.(canceled)
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 15. (canceled)16. (canceled)
 17. A method comprising: positioning a chip to a locationof a wafer, the wafer comprising a temperature driver therein, thetemperature driver comprising a plurality of individually addressableunits; bonding the chip to the wafer by changing a temperature of thelocation using the individually addressable units, without changing atemperature of another location of the wafer using the individuallyaddressable units.
 18. The method of claim 17, wherein the chip is partof an X-ray absorption layer of an X-ray detector and the wafer is partof an electronics layer of the X-ray detector; wherein the X-rayabsorption layer is configured to absorb X-ray photons and theelectronics layer comprises an electronics system configured to processor interpret signals generated by the X-ray photons.
 19. The method ofclaim 17, wherein the chip comprises a III-V semiconductor and the wafercomprises silicon.
 20. The method of claim 17, wherein the temperatureof the location is changed such that solder bumps at the location aremelted.